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Si4638DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0065 at V GS = 10 V
0.008 at V GS = 4.5 V
I D (A) a
22.4
20.2
Q g (Typ.)
27.5 nC
? Halogen-free According to IEC 61249-2-21
Definition
? SkyFET ? Monolithic TrenchFET ? Power
MOSFET and Schottky Diode
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO- 8
? Notebook System Power
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
? DC/DC Conversion
D
Top V ie w
G
Schottky Diode
N -Channel MOSFET
Orderin g Information: Si463 8 DY-T1-E3 (Lead (P b )-free)
Si463 8 DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
22.4
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
18
16 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
12.7 b, c
70
5.3
2.7 b, c
30
45
A
mJ
T C = 25 °C
5.9
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.8
3 b, c
W
T A = 70 °C
1.9 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
33
16
42
21
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68745
S09-0764-Rev. B, 04-May-09
www.vishay.com
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